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Tap the green arrow at the bottom of the Query Analyzer 3.0 screen to view the row you inserted into the tb_clients table. If you are familiar with ADO.NET programming on the full .NET Framework, you will be pleasantly surprised by just how similar the code in this example is to what you would use to access SQL Server 2000 or 2005 through ADO.NET (e.g., instead of SqlConnections, you use SqlCeConnections, and SqlCeCommands now replaces SqlCommands). Note a few things in this example. First, you not only close but dispose of connections to SQL Everywhere when you are done with them. While SQL Everywhere is a multi-user database and supports multiple open connections, the SqlCeConnections object is memory intensive on a mobile device. Remember that your code is typically running on a device with limited memory, and garbage collection is a relatively expensive operation in the Compact Framework. In addition to SqlCeConnection, be sure to close and dispose of SqlCeCommands, SqlCeDataReaders, RemoteDataAccess and Replication objects when they are no longer needed. In addition, note the use of reflection to determine the current directory in which the sample program is running. This is a nice way to keep your SQL Everywhere database in the same folder as your mobile program without hard-coding the path to the database.

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The ability to save solid bodies out to part files directly from the lower half of the Split PropertyManager has caused some serious file management problems in versions previous to SolidWorks 2009. The 2009 version of the software has fixed most of these problems. In previous versions, if you add features to a part created by saving a body out from the Split feature, making changes to the Split feature could wind up overwriting the file with the additional features. Also changing the number of bodies going into the Split feature usually had bad effects on downstream

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Consider this easy and useful example: a customer wants you to make a little animation of a holder for a stethoscope that he will show to a potential client in PowerPoint. The holder opens, the stethoscope slides out, and then the animation is reversed. The assembly with the animation saved in it is on the CD-ROM as 33 scopecozy. sldasm. The assembly and the completed animation timeline is shown in Figure 33.15.

30 min, it was further increased to 540 C over another 10-min period and held for 2 h to form a 50-nm-thick a-Si lm. Next, the amorphous lm was converted to a polycrystalline one by irradiating it with a 308-nm excimer laser at 345 mJ/cm2 (23-ns pulse, 20 shots with 250 Hz). After the poly-Si had been etched to create islands, a 120-nm-thick SiO2 gate insulator (Gox in Fig. 5.6a) was formed by PE-CVD, followed by tantalum sputtering and etching to form gate electrodes. The source and drain regions were formed by self-aligned ion implantation of phosphorus ions using the gate electrodes as a mask. Finally, we made the TFTs accessible for measurement by forming an interlayer insulator, opening contact holes in the insulator to reveal the source and drain regions, and then sputtering aluminum to form electrodes. The channel width and length of the TFTs were both 10 m. The coating-formed silicon lm did not present any notable problems or dif culties during the above fabrication steps, as the silicon lm was of semiconductor-grade purity and the lm processing conditions etching rate, laser conditions, and so on were nearly the same as those used for the CVD-produced silicon lm. For comparison, conventional TFTs were fabricated by the same process, except that the silicon lm was formed by CVD. As shown in Fig. 5.6b, these TFTs exhibit good electrical characteristics, with eld-effect mobility (calculated from the transconductance in the

Table 49-1: Disco Tool Command-Line Options Table 49-2: Files Created by the disco Tool Table 49-3: WSDL Tool Command-Line Options

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Gain and bandwidth 54 conversion 81 3, 86, 91, 102 current 502, 516 18, 529 32, 543 4, 566, 576, 578, 581, 747 and NF 16, 18, 26 7, 37, 39, 41 2 open- and closed-loop 251 voltage 502 4, 513 16, 519, 542, 560, 563, 575, 581, 584, 745 7, 756 Gate 237, 552, 555, 557, 563, 565, 579, 708 MOSFET 483, 497, 499, 638 9 Gilbert, Barrie 103 Gilbert cell 78, 83, 90 1, 93, 97, 103, 106, 133, 136, 150, 152, 469 70, 472, 474 5, 487, 497 8 MOSFET 90 1, 97 8 GND 611 14, 616 19, 621, 624 6, 630, 639, 644, 680 1, 689, 693, 696, 698 Ground 504, 516, 527, 539, 542, 545 6, 562, 617 21, 630 2, 653, 655, 665 7, 669, 671, 675, 684, 695, 712 reference 611 13, 616 18, 621, 623 4, 630, 638 surface 612, 623, 654 5, 657 62, 664 6, 671 2, 676 7, 679, 683, 711 12 terminals 619, 623 Grounding 611 14, 616, 618, 620, 622, 624, 626, 628, 630, 632, 634, 636, 638, 640, 642, 644, 696 7 AC/RF 655, 664, 679 81 DC, and AC 612 inappropriate or imperfect 614 17, 619 parallel 697 problems 613 14, 620 RF/AC 611, 614, 616, 620 3, 628 9, 637, 664 5, 680 2 RFIC 630 series 697 Guard ring 692 6, 705 Harmonics 32, 36, 63 4, 117, 119, 124, 706, 746, 773 4, 776 7, 802 Haus s theory 11, 17, 761 High Noise Ampli er. See HNA High Pass Filter. See HPF Histogram 732, 736 7 HNA (High Noise Ampli er) 700 HPF (High Pass Filter) 219 IF (Intermediate Frequency) 86 7, 94 zero (direct conversion) communication system 113, 119 21

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