vb.net ean 13 reader

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It might be assumed that the damage species arising from electron injection in the oxide for both n-MOS and p-MOS transistors should be identical While it is not possible to prove conclusively that this is so, measurements of the capture cross section made on p-MOS transistors give a value in the mid-10 18 cm 2 range, a value within the experimental error of the values found in electron-generated electron traps in n-MOS transistors Relaxable (Slow) States Nnit Given tie correlation between hot-electron-created oxide electron traps in n-channel transistors, and their counterparts in the p-channel transistors, these traps would be expected to show some evidence of electron detrapping also Brox et al and others have shown that these states do, indeed, detrap.

39,4 1 The detrapping follows a logarithmic time dependence and that the stronger the negative field on the gate during the detrapping phase (the drain, source, and substrate being grounded), the more rapidly the damage detraps Intermediate Gate Voltage Stressing (Vg = VdI2) Interface States Initially it was thought that electron trapping was the only (or overwhelming) damage mechanism However, the symmetry in the gate oxide injection species (see Figs 62 and 69) suggest that the damage in p-channel transistors should be reflected in the behavior of the gate current, that is, electron trapping at low gate voltages in p-MOS due to the large electron gate current, and interface states and oxide hole traps at h gh gate voltages, where gate hole injection occurs The first indications that mechar isms other than electron trapping might be occurring was shown by Tsuchiya et al 41 in shorter-channel transistors (0.

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25 gtm) at high gate voltages, where he showed that there was a contribution to hot-carrier damage from interface states This damage occurs at high gate voltages and peaks at voltages corresponding approximately to Vg = Vd/2, as can be seen in Fig 612,.

For the sake of cost-saving, printed inductors are adapted for L2 and L5. Their con gurations are shown in Figure 6.25. Their inductances can be adjusted by trimming the grill portion of the printed inductor. Figure 6.25(a) shows the primary printed inductor before trimming processing. Figures 6.25(b) and 6.25(c) show the printed inductor after it is trimmed for cases when the VCO operates in low- and highfrequency ranges. Its Q value is approximately 60 to 90, which is lower than that of an air coil but much higher than that of a spiral inductor in an RFIC. Measuring the inductance of a printed inductor in the laboratory is a problem not only in theory, but also in practice. At the present, some calculation methods are available, but only for printed inductors of symmetrical or uniform geometry and not for irregular or un-symmetrically shaped printed inductors. It has been proven that any printed inductor can be modeled by the equivalent circuit as shown in Figure 6.26. Instead of distributed parameters, an equivalent circuit with lumped parameters is preferred. The values of the parts in the equivalent circuit in Figure 6.26 can be obtained by measuring the impedance three times. The measured impedance C A between the nodes A and G is contributed by two branches in parallel. One branch is the capacitor CA. Another branch is CL+CB, the inductor L connected with the capacitor CB in series:

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