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Small-signal models of transistors permit linear circuit analysis of ampli er circuits, using the well-established techniques of s 3 and 4 Small-signal, or h-parameter, BJT models take into account the base and collector i-v characteristics in terms of linearized resistance parameters and controlled sources These models can be used to analyze the operation of the BJT as a linear ampli er Various ampli er con gurations exist, each of which can be characterized by an equivalent input and output resistance and by an open-circuit voltage gain Field-effect transistors can also be modeled by means of small-signal parameters and controlled sources Small-signal FET ampli ers can be designed on the basis of linear circuit models in a manner similar to BJT ampli ers BJTs are characterized by a more linear transfer characteristic than FETs and provide, in general, greater current output However, the input impedance of FETs is signi cantly larger In general, the favorable features of each family of transistors can be exploited when multistage ampli ers are designed All transistor ampli ers are limited in their frequency response by the presence of coupling capacitors and by internal transistor parasitic capacitances Transistors form the basis of many switching circuits Transistor switching circuits can employ either BJT or FET circuits, giving rise to two very large families of digital logic circuits: TTL and CMOS Each family is characterized by certain advantages; in particular, TTL circuits are faster and can provide greater load currents, while CMOS circuits are characterized by extremely low power consumption and are more easily fabricated Transistor switching circuits can be analyzed more easily than linear ampli er circuits, since one is usually concerned only with whether the device is on or off

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If functional size is being used to estimate the effort and duration of a development or enhancement project, try and get the most accurate size that you can within the limitations of information and resources available Use several size approximation techniques to refine the result before using its values in the project estimation exercise, since an error in the size compounds the errors in the estimates of effort and duration

CYU 101 CYU 102 = 224 (a) IBQ = 1996 A, ICQ = 1796 mA, VCEQ = 777 V (b) IBQ = 1646 A, ICQ = 1975 mA, VCEQ = 7065 V

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Design A: VCEQ = 173 V, ICQ = 425 mA Design B: VCER = 037 V, ICQ = 099 mA For = min : IBQ = 254 A, ICQ = 152 mA, VCEQ = 887 V For = max : IBQ = 112 A, ICQ = 22 mA, VCEQ = 601 V For IC = 10 mA: RB = 12 k , R1 = 614 k , R2 = 149 k (a) 145; (b) 98; (c) 1025 The ampli er behaves more closely to the ideal model if the source resistance is small and the load resistance is large (a) 105; (b) 71; (c) 105 AV = 5139; AI = 3417 IDQ = 032, 072, 128, 2, 288, 392, 512 mA; gm = 16, 24, 32, 4, 48, 56, 64 mA/V = 103; AV = 936 = 016, 024, 032, 04, 048, 056, 064 AV = 0146, 0218, 0291, 0364, 0436, 0509, 0582 625

Note In the next few sections, we will be discussing code used in Exercise 7-2. While that exercise will

common-base circuit a Determine the operating point of the transistor circuit b Draw the h-parameter model for this circuit

= 150

+ v (t) S _

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Dim stamper As New PdfStamper(reader, New FileStream( "C:\Users\ dharmendra\Desktop\test1. pdf " , FileMode.Create), PdfWriter.

aware of the need to validate, refine, and eventually translate your size estimates into exact measures, in order to avoid spreading uncertainty from the size approximation to the effort and duration estimates

c If hoe = 10 5 S and hf e = , determine the voltage gain as de ned by vout /vin d Find the input resistance, ri e Find the output resistance, ro

+ _

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the following parameter values (see Figure 107): VCC = 10 V, R1 = 3000 , R2 = 3000 , RS = 50 RC = RE = 100 , RL = 150 , = 100 a Find the operating point of the transistor b Draw the AC equivalent circuit of the ampli er ,

Find the Q point of the transistor Draw the AC equivalent circuit, using h parameters Find the voltage gain vL /vin Find the input resistance, ri Find the output resistance, ro

Rin RE iE + VL iC iL RL _

Once you have established your project s software functional size expressed as a number of functional size measurement method units (for example, function points) you can use the ISBSG data to estimate the likely project effort and duration The following chapters present estimating techniques that allow you to do this

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how to compress pdf file size in c#

compress pdf file size in c#

compress pdf file size in c#

compress pdf file size in c#