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Block Diagonalization Consider the case where each MS has multiple antenna elements (Nr(k) 1) and the BS transmits Nr(k) data streams to each user. A simple solution can be achieved by imposing the dimensionality constraint Nr(k) = Nt . This constraint is very much along the lines of interpreting the multiple MSs as a distributed array, and the dimensionality constraint ensures that the number of data streams does not exceed the number of RX chains that can demodulate the signal. To couch it in the language of Section 20.1: each antenna is treated as a separate (single-antenna) user, and the BS preprocessing makes sure that data streams arriving at the antennas are well separated. This eases the design of the MS, which does not have to do any additional processing. Nr(k) = Nt is actually too strict. According to this constraint, adding However, the constraint receive antennas at the MS decreases the number of users that can be transmitted to at a given point in time; this is obviously not a reasonable constraint, as additional receive antennas serve to improve the reception quality. Rather, it is the number of data streams that intended for the MSs that is limited, and data streams intended for different MSs have to be kept apart by appropriate beamforming at the BS side. Keeping the data streams of different MSs apart is achieved by a block diagonalization technique [Spencer et al. 2004b]. De ne for each user an interference channel matrix H(k) H(k) = [(H )T , . . . (H(k 1) )T (H(k+1) )T , . . . (H(K) )T ]T

CASE A Estimates DeJined Through a Minimum Property. Assume that the parameter set 0 is a locally compact space with a countable base (e.g., an open subset of a Euclidean space), (X, P) is a probability space, and U, p ( z , Q) is some real-valued function on X x 0 . Assume that z ! 2 , . . . are independent random variables with values in X, l2 having .. the common probability distribution P. Let T,(zl,. ,x,) be any sequence of functions T, : X n -+ 0 ,measurable or not, such that

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Lattice mismatched material may grow completely strained up to a critical thickness, which strongly decreases with increasing mismatch f. For typical base widths (15-50nm) in high-frequency HBTs the critical thickness criterion limits the choice of SiGe alloys to Si-rich (x = 0.3-0.2) ones. Nevertheless, it was demonstrated that the improved emitter efficiency allows a complete inversion of the doping levels in such strained SiGe-DHBTs. Instead of very high doping of the emitter as in bipolar junction transistors (BJT) now, the base is doped to much higher doping levels than the emitter (Fig. 2.28). The DHBT-concept provides, therefore, very thin base layers with acceptable or even improved base sheet resistivities (typically 1-7 kQ square). This leads to excellent high-frequency properties, low noise, or high current gain (up to 5000 was obtained at room temperature), and high Early voltages. Let us consider now in more detail the doping profile of a SiGeDHBT (Fig. 2.29). The whole active structure on top of an As-doped subcollector (Sub-C in Fig. 2.29) was grown in one srep by molecular beam epitaxy (MBE).64 It consists of the n-doped collector (C), the highly p-doped SiGe base (B), followed by a low-doped emitter (LDE) and a highly doped emitter (HDE). A low-doped emitter means lower (1018 cm-3) doping than in tile BJT. Clear doping-level inversion (base doping, 6 - 1019 cm-3) is allowed by a higher Ge content (x = 0.28) as used for drift

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